发明名称 METHOD FOR MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ RADIATION SOURCE MANUFACTURED BY THIS METHOD
摘要 <p>A method for etching multi-stage substrate and a terahertz radiation source using the same are provided to improve etching quality by minimizing a radius of curvature of an edge. A oxide film(310) is formed on a first substrate(300). A photoresist coating is formed on one surface of the first substrate. An align key pattern(330) is formed on a photoresist coated surface. A first mask pattern is formed on an opposite surface of the photoresist coated surface. A hole is formed by etching the first substrate with the first mask pattern as an etching mask. A second substrate(350) is contacted with the first substrate. A second mask pattern is formed on the second substrate. A hole is formed by etching the second substrate with the second mask pattern as an etching mask. An oxide film having etching selection ratio between the first substrate and the second substrate is removed.</p>
申请公布号 KR20090011222(A) 申请公布日期 2009.02.02
申请号 KR20070074593 申请日期 2007.07.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAIK, CHAN WOOK;KIM, JONG SEOK;JUN, SEONG CHAN;KIM, SUN IL;KIM, JONG MIN;JUN, CHAN BONG;LEE, SANG HUN
分类号 H01L21/306 主分类号 H01L21/306
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