| 摘要 |
A plasma etching apparatus and storage media are provided to prevent the crack and to lightweighting the surface state the photoresist pattern. The wafer (W) is located on the susceptor(16) within the chamber(10). Process gas including the CF4 gas, the CH2F2 gas, and the C5F8 gas are injected into the chamber. The high frequency power is applied in the upper electrode(34) and then the plasma is generated. The direct current voltage is applied at the upper electrode. The opening formed in the photoresist film is lightweighted by the generated plasma. The object film on wafer is etched.
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