METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a gate of the semiconductor device is provided to prevent the fail during the SAC(Self Alignment Contact) by preventing the collapse of gate. A gate insulating layer, a gate conductive layer and a gate hard mask layer are successively formed on a semiconductor substrate. The spike RTA(Rapid Thermal Annealing) process is performed to the semiconductor substrate. The gate insulating layer, the gate conductive layer, and the gate hard mask layer are transformed through the coefficient of thermal expansion by the spike RTA. The gate is formed by etching the gate hard mask layer, the gate conductive layer and the gate insulating layer.