METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to raise the adhesive force of silicon oxide film formed on the low dielectric insulator layer by increasing the mechanical adhesive force of the low dielectric insulator layer. A low dielectric insulator layer(106) is formed on the upper part of a semiconductor substrate(100). The low dielectric insulator layer is cured so that the low dielectric insulator layer has high density. A glue layer(108) is formed on the low dielectric insulator layer by using the curing process. The flow process using the oxygen is performed in order to improve the adhesive property of the cured low dielectric insulator layer.