METHOD OF FABRICATING SEMICONCONDUCTOR DEVICE

摘要

A manufacturing method of the semiconductor device is provided to realize the double patterning technique by using the ACL hard mask as a final ILD etching mask. The second object film(33) is formed on the first object film(32). The third object film pattern(34a) exposing a part of the second object film is formed on the second object film. A plurality of first bar type patterns are separately formed on the exposed second object film. A plurality of second bar type patterns(35b) are arranged on the third object film pattern to be crossed with the plurality of first bar type patterns. A polymer pattern(35a) is formed on the lateral side of second bar type patterns. The second object film and the first object film are etched by using the polymer pattern and the third object film pattern.