METHOD OF DEPOSITING SILICON OXIDE LAYER WITH INCREASED GAP-FILL ABILITY

摘要

A method for depositing a silicon oxide layer is provided to deposit a mobility improved silicon oxide layer so as to form a film for a trench uniformly, and adjust the mixture ratio of silicon sources to control mobility of the silicon oxide layer. A method for depositing a silicon oxide layer comprises the following steps. At least one silicon source and a reaction gas are supplied into a reactor. A silicon oxide layer is deposited using the supplied silicon source and the reaction gas. The silicon oxide layer includes at least one bond among Si-H, Si-Cl, and Si-F bond in Si-O bond network. The Si-H, Si-Cl, and Si-F bond are provided from the silicon source.