| 摘要 |
A manufacturing method of semiconductor device is provided to improve manufacturing efficiency of a semiconductor device by filling an oxide film inside a trench without a void. A trench(140) and a space pattern(120) are formed on a semiconductor substrate(110). A first gap fill oxide layer is formed by coating oxide material on the semiconductor substrate. A part of the oxide layer formed on the space pattern is etched. A protective film(170) is formed on the semiconductor substrate. An oxide layer remaining on the space pattern is removed by etching. A second gap fill oxide layer(150) is formed inside the trench by coating oxide material on the semiconductor substrate.
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