发明名称 FLASH MEMORY AND PROGRAMMING METHOD THEREOF
摘要 A flash memory and a programming method are provided to reduce a program time by reducing a program frequency in cells thereof. A plurality of LSB patterns are determined(1). First pattern numbers are outputted by counting each of the LSB patterns included in input data. Second pattern numbers are outputted by counting each of the LDS patterns includes a plurality of data included in a memory. The first pattern number similar to the second pattern number is searched(2). The input data are programmed as MSB in the stored location of the data corresponding to the second pattern similar to the first pattern number(4).
申请公布号 KR20090011773(A) 申请公布日期 2009.02.02
申请号 KR20070075694 申请日期 2007.07.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SON, CHANG IL
分类号 G11C16/10;G11C16/02 主分类号 G11C16/10
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