| 摘要 |
The invention relates to processes for deposition of metal oxide films, particularly to a process for deposition on base of spray pyrolysis. The process for obtaining thin films of oxide semiconductors, such as SnO2 or In2O3, includes pulverization on the substrate heated up to the temperature of 300à600?C of a preliminarily prepared solution of metal salt, at the same time on the surface of the substrate it is preliminary deposited additional nanolayers of hydroxides of other metal oxides, such as Fe, Ce, Ni, Zr by multiple ionic stratification and then the substrate with applied layers of hydroxides with a thickness of 2à20 nm are subjected to the thermal processing at the temperature of 300à600?C.
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