| 摘要 |
An electrostatic discharge device is provided to install a plurality of electrostatic discharge parts including a plurality of diodes and including an NMOS transistor which can be discharged and turned on even in lower static electricity, thereby preventing that a transistor gate insulating layer of an input buffer is destroyed. An electrostatic discharge device comprises the followings. A first electrostatic discharge part(20) discharges static electricity to a first electric discharge line(VDD) when the static electricity is generated in a pad(10). A second electrostatic discharge part(30) is applied with bias voltage and driving voltage from the first electrostatic discharge part, and discharges the static electricity generated in pad to a second electric discharge line(VSS). A third electrostatic discharge part(40) is applied with the driving voltage from the first electrostatic discharge part, discharges the static electricity generated in pad to the second electric discharge line, and is connected to an input buffer of an internal circuit. The first electrostatic discharge part comprises the followings. A bias confirmation part(22) applies the bias voltage to the second electrostatic discharge part through two nodes. A driving voltage applying part(24) applies the driving voltage to the second and third electrostatic discharge parts. An electrostatic discharge route(26) discharges static electrostatic voltage corresponding to the driving voltage to a power voltage line.
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