| 摘要 |
An image sensor capable of vertically integrating transistor circuit and photo diode, and manufacturing method thereof are provided to reduce process cost by performing complex circuit without reduction of sensitivity in each unit pixel. A semiconductor substrate includes a circuit. An interlayer insulation film(120) including a metal wire(130) is arranged on the semiconductor substrate. A first conductive dopant region(230) is arranged on the interlayer insulation film in order to connect with the metal wire. A second conductive dopant region(240) is arranged between the first conductivity dopant regions. A photo diode is arranged on the first conductivity dopant region. A second conductive region(220) is arranged on the second conductive dopant region in order to isolate the photo diode, and is made of conductive dopant material like the second conductive dopant region.
|
