发明名称 Process for producing group III nitride substrate
摘要 <p>An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.</p>
申请公布号 HK1100100(A1) 申请公布日期 2009.01.23
申请号 HK20070107889 申请日期 2007.07.20
申请人 SUMITOMO ELECTRIC INDUSTRIES LTD. 发明人 MATSUMOTO NAOKI
分类号 H01L;B24B;B28D 主分类号 H01L
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