THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor capable of performing high luminance, high resolution, and fast response speed, and manufacturing method thereof are provided to perform display device having flexible property by forming thin film transistor on graphite substrate flat-processed with polyimide or silicate. A thin film transistor includes a gate electrode, a source electrode, and a drain electrode formed on a substrate. The substrate is a graphite substrate(11) having flexible property. The thin film transistor includes a flat layer(21). The flat layer is formed by flattening an irregular surface of the graphite substrate with polyimide or silicate using spin coating or chemical mechanical polishing method.