MEMORY CELL STRUCTURES, MEMORY CELL ARRAYS, MEMORY DEVICES, MEMORY CONTROLLERS, MEMORY SYSTEMS, AND METHOD OF OPERATING THE SAME

摘要

Memory cell structures, memory cell arrays, memory devices, memory controllers, memory systems, and an operation method thereof are provided to perform high speed operation by transmitting a row address and a column address at the same time. A memory cell without a capacitor of vertical structure includes a substrate(10). An insulation layer(12) is positioned on the substrate. A first node(14) and a second node(16) are positioned on the insulation layer. A floating body region(18) is positioned on the insulation layer and between the first node and the second node, and is electrically isolated from the substrate by the insulation layer. The memory cell additionally includes a gate insulation layer(20) and a gate structure(G) including a gate(22).