| 摘要 |
<p>A test structure of a semiconductor device and a forming method thereof are provided to enable a conductive pattern to function as a dummy pattern preventing etching damage of circuit patterns and function as an antenna sensing plasma damage, thereby reducing a scribe lane area and a net die area. A test structure of a semiconductor device comprises a transistor(130), a conductive pattern(160) and a pad unit. The transistor is formed on a substrate(100) in which circuit patterns are formed. The conductive pattern reduces etching damage of the circuit patterns or is used for arrangement of the circuit patterns, and senses plasma damage by being connected to the transistor. The pad unit is connected to the transistor so as to supply an electric signal to the transistor. The conductive pattern comprises a first conductive line(162) and a second conductive line(164). According as the conductive pattern sensing the plasma damage is used even as an align pattern or a dummy pattern, high integration of the semiconductor device can be achieved. .</p> |
