| 摘要 |
A power semiconductor device includes a semiconductor body (10), the semiconductor body comprising source and drain regions (13, 14, 14a) of a first conductivity type, and a channel-accommodating region (15) of a second, opposite conductivity type which separates the source and drain regions. The drain region comprises a drain contact region (14a) and a drain drift region (14) which extends from the drain contact region to the channel accommodating region (15), the drain drift region having a doping profile which decreases substantially exponentially from its interface (19) with the drain contact region, to its interface (21) with the channel-accommodating region. This configuration provides lower switching losses relative to a device with a uniform or linear drain doping profile.
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