SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor laser is provided with a lower clad layer (12) having a first conductivity type; an active layer (14) which is arranged on the lower clad layer (12) and has a plurality of quantum dots; and an upper clad layer (18) which is an isolated ridge section (30) arranged on the active layer (14) and has a second conductivity type. When the width of an upper surface of the ridge section (30) is expressed as Wtop, and the width of the ridge section (30) at a height of 50nm from a lower surface of the ridge section (30) is expressed as W1, an inequality of W1=Wtop+0.4µm is satisfied. A method for manufacturing such semiconductor laser is also provided.