| 摘要 |
A method for manufacturing a nitride semiconductor laser device and the nitride semiconductor laser device are provided to improve a current voltage characteristic by preventing the lowering of a rising voltage. An element region includes a resonator comprised on a substrate. An island shape layer(13a) is separated from the element region. An exposure region(11a) divides the element region and the island shape layer. A laminate includes an auxiliary groove(15) formed along the resonator surface. The resonator surface is obtained by dividing the laminate and the substrate along the auxiliary groove. |
