| 摘要 |
PROBLEM TO BE SOLVED: To provide a power amplification circuit having high stability by minimizing the influence of the variations of device element characteristics which depend on the temperature and preventing generation of feedback by the leakage into the emitter terminal of an amplification transistor. SOLUTION: The grounding capacitance 104 of an output matching circuit 30 is connected not to the grounding terminal of the amplification transistor 7 but to the grounding terminal of a bias circuit 40, while the base terminal of the amplification transistor 7 is grounded via a grounding resistor 103. Thus, the feedback to the amplification transistor 7 by the leakage current is removed, and variation of temperature characteristics of the power amplification circuit can be minimized by making the bias current, which flows into the base terminal of the amplification transistor 7 and varies with the temperature variation, flow to the ground via the grounding resistor 103. COPYRIGHT: (C)2009,JPO&INPIT
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