SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method that can improve hole mobility by applying a uniaxial compression stress from an SiGe mixed crystal layer to a p-channel area for a semiconductor device having the p channel. SOLUTION: When a trench is built on a silicon substrate for a source region and a drain region and then the trench is filled epitaxially with the SiGe mixed crystal layer, the side wall of the trench is built using multiple facets and the atomic concentration of Ge in the SiGe mixed crystal layer is increased beyond 20%. COPYRIGHT: (C)2009,JPO&INPIT