SOURCE-DRAIN ELECTRODE, THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of exerting excellent TFT characteristics even if a lower barrier metal layer is omitted and directly and definitely connecting source-drain wires to a semiconductor layer of the TFT. SOLUTION: A source drain electrode 34 is composed of a nitrogen containing layer and a thin film of pure Al or Al alloy. The nitrogen in the nitrogen containing layer is coupled with Si in the semiconductor layer 33 of the thin film transistor, and a thin film of pure Al or Al alloy is connected to the semiconductor layer 33 of the thin film transistor through the nitrogen containing layer. COPYRIGHT: (C)2009,JPO&INPIT