| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device enabling effective prevention of the etching of side wall insulating films on a gate electrode. SOLUTION: The semiconductor device comprises a semiconductor substrate 11, a gate insulating film 13 formed on the semiconductor substrate, the gate electrode 22 formed on the gate insulating film, the first insulating film 17 formed on the side face of the gate electrode, the second insulating film 28 formed of a material different from that of the first insulating film to cover the surface of the first insulating film, and the third insulating film 23 formed of a material different from that of the second insulating film to cover the semiconductor substrate, the gate electrode and the second insulating film. COPYRIGHT: (C)2009,JPO&INPIT
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