| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for improving electrical characteristics of a film by reducing an amount of impurities in the film and improving film density without deteriorating the morphology of an amorphous film that is formed when forming the amorphous film on a substrate by using the supercritical deposition method. SOLUTION: By a method having (a) a step for depositing an amorphous film on a substrate by supplying a precursor solution that is a film precursor dissolved in a supercritical fluid into a deposition chamber, and (b) a step for heat-treating the amorphous film under a heat-treating atmospheric gas at a temperature that is lower than its crystallization temperature, the amorphous film is formed on the substrate. The step (b) may be performed in the deposition chamber, or performed in a heat treatment chamber different from the deposition chamber. COPYRIGHT: (C)2009,JPO&INPIT
|
