| 摘要 |
PROBLEM TO BE SOLVED: To improve a production yield of a semiconductor apparatus having a structure in which a single contact electrode is formed at a plurality of wiring spots. SOLUTION: The semiconductor apparatus includes a gate electrode GE3 which extends in the first direction A of the main surface of a semiconductor substrate 1 to be formed on the main surface via a gate insulating film GZ1 and has a side wall spacer 5 on the side wall thereof, a source/drain region p1J which reaches a first portion J that is a lower side portion thereof, and a silicon nitride film 6 and a silicon oxide film 7 which are formed in order to cover the main surface of the semiconductor substrate 1 and have different etching speeds. On the first portion J, the gate electrode GE3 is not covered with the side wall spacer 5. The upper surface and side face of the gate electrode GE3 and the source/drain region p1J are covered with a silicide layer 4J, thus electrically connected to each other, and a node contact electrode NC2 is electrically connected to the silicide layer 4J. COPYRIGHT: (C)2009,JPO&INPIT
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