| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can suppress the formation of a recessed portion in the edge part of a LOCOS oxide film. SOLUTION: The method for manufacturing a semiconductor device includes a process to form a pad oxide film 10 in a silicon substrate 1, a process to form a silicon nitride film 12 on the pad oxide film 10, a process to form an opening pattern on the silicon nitride film 12, a process to form a LOCOS oxide film 2 by thermal oxidation of the silicon substrate 1 using the silicon nitride film 12 as a mask and to form a silicon nitride oxide film 12a on the surface of the silicon nitride film 12, a process to nitride the silicon nitride oxide film 12a, and a process to remove the nitrided silicon nitride oxide film 12a and the silicon nitride film 12 by an identical etching process. COPYRIGHT: (C)2009,JPO&INPIT
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