发明名称 |
METHOD FOR FORMING HIGH-K CHARGE STORAGE DEVICE |
摘要 |
Structures and methods of fabricating of a floating gate non-volatile memory device. In a first example embodiment, We form a bottom tunnel layer comprised of a lower oxide tunnel layer and a upper hafnium oxide tunnel layer; a charge storage layer comprised of a tantalum oxide and a top blocking layer preferably comprised of a lower hafnium oxide storage layer and an upper oxide storage layer. We form a gate electrode over the top blocking layer. We pattern the layers to form a gate structure and form source/drain regions to complete the memory device. In a second example embodiment, we form a floating gate non-volatile memory device comprised of: a bottom tunnel layer comprised essentially of silicon oxide; a charge storage layer comprised of a tantalum oxide; a top blocking layer comprised essentially of silicon oxide; and a gate electrode. The embodiments also comprise anneals and nitridation steps.
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申请公布号 |
US2009023280(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20080243962 |
申请日期 |
2008.10.01 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
ANG CHEW-HOE;SOHN DONG KYUN;HSIA LIANG CHOO |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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