| 摘要 |
To provide a fine transistor of high precision. A method for fabricating a transistor comprises the step of forming a gate electrode (340) on the surface of a semiconductor substrate, the step of introducing an impurity across said gate electrode (340), and the step of activating said impurity, thereby to form a source/drain region (310, 320) in the region having said impurity introduced thereinto. In the transistor fabricating method, the step of introducing said impurity includes a plasma irradiating step. The method further comprises the step of forming, prior to said activating step, a reflection preventing film (400) on the surface of the region having said impurity introduced thereinto, so that the optical reflectivity of said impurity introduced region may be lower than the reflectivity of said gate electrode surface.
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