| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to minimize a charge loss and a charge gain by restricting the movement of the mobile ion by giving compressive stress to a barrier nitride film. A first spacer and a second spacer are formed in a side wall of a gate electrode(104). The first spacer is made of the tetra ethyl ortho silicate layer. The second spacer is made of a first nitride film. A source/drain region is formed by using the first and second spacers and a gate electrode as a mask. The second spacer is removed. A second nitride film(109a) is deposited in a front surface of a substrate. The ion is implanted into the second nitride film to generate compressive stress. A barrier nitride film(109) is formed in the side wall of the first spacer by etching the second nitride film.</p> |
