| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To balance provision of a high breakdown voltage with reduction of resistance of a semiconductor layer formed on a surface of a drift layer for forming a PN diode. <P>SOLUTION: In relation to regions interposed among respective p-type layers 8a-8e within the respective p-type layers 8a-8e and an n- -type drift layer 2, design to make their charge amounts coincide with one another, that is, design to make the charge amounts (hole charge amounts) of the respective p-type layers 8a-8e coincide with the charge amounts (electron charge amounts) of the regions interposed among the respective p-type layers 8a-8e within the respective p-type layers and the n- -type drift layer 2 is carried out. When it is assumed that the charge amounts are made to coincide with each other, design of each part can be easily carried out, and a JBS (junction barrier Schottky diode) capable of balancing provision of a high breakdown voltage with reduction of resistance of the p-type layers 8a-8e for forming a PN diode can be easily designed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
