| 摘要 |
PROBLEM TO BE SOLVED: To efficiently transfer a signal charge without affected by potential of an element isolation region even when a pixel is miniaturized and a gate width of a transfer gate is reduced. SOLUTION: The solid-state imaging device includes a photo diode 33, a floating diffusion layer 34 formed apart from the photo diode, the transfer gate 35 formed so that both ends are respectively positioned on an inner side from a boundary with the element isolation region in a second direction intersecting with a first direction in which the photo diode and the floating diffusion layer are arranged side by side, and a channel stopper layer 37 formed so as to extend to the boundary with the element isolation region on a surface of an element region in respective peripheries of lower parts of both of the ends in the second direction of the transfer gate. COPYRIGHT: (C)2009,JPO&INPIT
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