| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser device for easily forming a ridge waveguide without the need of the composition change or design change of a conventionally used semiconductor layer in a monolithic 2-wavelength semiconductor laser device. SOLUTION: In the formation of the ridge waveguide, first and second cap layers are simultaneously etched with an etchant for selectively etching the first and second cap layers. Then, a part of a third clad layer, an intermediate layer and a part of a sixth clad layer are simultaneously etched with an etchant for selectively etching a part of the third clad layer, the intermediate layer and a part of the sixth clad layer. The residual part of the third clad layer is etched with an etchant for selectively etching the residual part of the third clad layer, and the residual part of the sixth clad layer is etched with an etchant for selectively etching the residual part of the sixth clad layer. COPYRIGHT: (C)2009,JPO&INPIT
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