| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having a bit line contact structure without causing increase of contact resistance nor generation of leak current. SOLUTION: Bit lines 109, gate insulation films 104 having a charge capturing function, word lines 114 orthogonal to the bit lines 109, and inter-word line embedding insulation films 115 are formed on a surface of a substrate 100, between the bit lines 109 on the substrate 100, on the gate insulation film 104, and between the word lines 114, respectively. In a bit line contact formation region, an opening is formed on the inter-word line embedding insulation film 115, sidewall films 117 are formed on side surfaces of the opening, and bit line contacts 121 formed between the word lines 114 are formed to be self-aligned with respect to the sidewall films 117 formed on the side surfaces of the opening, and connected to the bit lines 109. COPYRIGHT: (C)2009,JPO&INPIT
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