| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability on a word line by a novel contact hole structure. SOLUTION: A semiconductor memory according to an embodiment of the present invention has a memory cell array area having memory cells, a word line contact area adjacent to the memory cell array area, word lines disposed across the memory cell array area and word line contact area, contact holes CS1(n-1) provided on word lines 17 and 18 in the word line contact area, and a word line driver connected to the word lines 17 and 18 through the contact holes CS1(n-1). Further, the size of each of the contact holes CS1(n-1) is larger than widths of the word lines 17 and 18 and lowest portions of the contact holes CS1(n-1) are lower than top surfaces of the word lines 17 and 18 and higher than reverse surfaces thereof. COPYRIGHT: (C)2009,JPO&INPIT
|
