发明名称 APPARATUS FOR MANUFACTURING HIGH PURITY SILICON
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing high purity silicon with which high purity and crystallinity silicon having a relatively large size can be continuously manufactured by the reduction of silicon tetrachloride by zinc in a system. SOLUTION: The apparatus for manufacturing high purity silicon by the reaction of zinc gas and silicon tetrachloride is equipped with: a reaction column section including a gas generation mechanism for forming the zinc gas and feeding the gas to a reaction column, a supply mechanism for feeding silicon tetrachloride to the reaction column, and a mechanism for forming silicon or a silicon precursor by subjecting the zinc gas and silicon tetrachloride to a catalytic reaction and at the same time, growing, as a silicon crystal, the formed silicon or the silicon precursor by colliding the silicon or the silicon precursor with each other; and a solid-gas separation section for dropping the grown silicon crystal to separate it from a reaction gas and sending the separated silicon crystal to a silicon holding part. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009013042(A) 申请公布日期 2009.01.22
申请号 JP20070198103 申请日期 2007.07.03
申请人 CS GIJUTSU KENKYUSHO:KK 发明人 SHIMAMUNE TAKAYUKI
分类号 C01B33/033 主分类号 C01B33/033
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