SEMICONDUCTOR DEVICE HAVING A TRENCH ISOLATION REGION AND METHOD OF FABRICATING THE SAME

摘要

The semiconductor device and the manufacturing method thereof are provided to prevent the damage of he trench isolation region due to the post etch process regardless of the different widths of the trench regions. The first trench region (120a) and the second trench domain (120b) are formed in the substrate. The width of the second trench region is wider than the width of the first trench region. The first preliminary bottom material pattern(137a) is formed in the first trench region. The second preliminary bottom material pattern(137b) is formed in the second trench region. The first and second preliminary bottom material patterns are etched and then the upper side of the first and second preliminary bottom patterns is positioned at the same level. The first top material pattern(145a) is formed on the first bottom material pattern. The second top material pattern(145b) is formed on the second down material pattern.