| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a semiconductor device in which electrical characteristics are measured by using an FET check transistor. SOLUTION: The semiconductor device 100 is configured so that the electrical characteristics are measured by using a pad part 140g for a gate, a pad part 140s for a source and a pad part 140d for a drain before forming a passivation film 115 covering the pad part 140g for the gate, the pad part 140s for the source and the pad part 140d for the drain in the manufacture process. COPYRIGHT: (C)2009,JPO&INPIT
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