| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing an electric field from concentrating in the vicinity of an outside part of the lower end of the outermost groove part. SOLUTION: This power MOSFET (semiconductor device) 100 is provided with: a drain region 2; a drain drift region 3; an extraction part 15 of the drain region 2; a base region 9 formed on the drain drift region 3; a source region 10 formed on the base region 9; a gate electrode 8 formed, through a gate insulation film 7, in a groove part 6a formed so that the source region 10, the base region 9 and one-side side surface 61a adjoin one another; and an impurity region 11 formed to adjoin the other-side side surface 62a of the groove part 6a between the groove part 6a and the extraction part 15, and formed to extend to a lower side relative to the lower end 63a of the groove part 6a. COPYRIGHT: (C)2009,JPO&INPIT
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