发明名称 |
Method of Producing Non Volatile Memory Device |
摘要 |
A method of forming a floating gate structure is disclosed, and includes modifying the etch chemistry of a plasma treated reactive ion etch process using an inert atom to physically damage a dielectric region. The damaged dielectric region is subsequently etched using a wet etch process.
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申请公布号 |
US2009023259(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20070779810 |
申请日期 |
2007.07.18 |
申请人 |
SHUM DANNY PAK-CHUM;ZHUANG HAOREN;POWER JOHN R |
发明人 |
SHUM DANNY PAK-CHUM;ZHUANG HAOREN;POWER JOHN R. |
分类号 |
H01L21/336;H01L21/4763 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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