| 摘要 |
A semiconductor device of the present invention includes a first transistor, a first stress-inducing film, a first insulating film, and a second insulating film. The first transistor is formed in a first active region of a semiconductor substrate, and includes a first gate electrode. The first stress-inducing film is formed so as to cover the first gate electrode, and applies a stress to the channel region of the first transistor. The first insulating film is formed on the first stress-inducing film and has a planarized upper surface. The second insulating film is formed on the first insulating film.
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