发明名称 APPARATUS FOR PROCESSING SUBSTRATE WITH ATMOSPHERIC PRESSURE PLASMA
摘要 An atmospheric pressure plasma processing apparatus is provided to maximize adhesion between a PI-film layer and Ni-plating by forming a concavo-convex part in the PI-film layer by irradiating the ion to a PI(Polyimide) film layer. An atmospheric pressure plasma system includes a pair of electrodes(112,116) and a magnetic force generation unit(120). A pair of electrodes are erected. The magnetic force generation unit forms a concavo-convex part by irradiating the ion to the PI-film layer of the substrate by a magnetic field generated between the electrode and the substrate.
申请公布号 KR20090008934(A) 申请公布日期 2009.01.22
申请号 KR20070072300 申请日期 2007.07.19
申请人 ADP ENGINEERING CO., LTD. 发明人 KIM, CHUN SIK
分类号 H01L21/3065 主分类号 H01L21/3065
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