| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which suppresses characteristics degradation of FWD to reduce switching loss. SOLUTION: A first conductive member is connected to an element formation surface of an MOS chip, and a second conductive member is connected to an anode electrode formation surface of the FWD chip where SBD is configured. A first heatsink is connected to the rear surface of a joint surface to the MOS chip of the first conductive member as well as the rear surface of a joint surface to the FWD chip of the second conductive member. A second heatsink is connected to the rear surface of a joint surface to the first conductive member of the MOS chip as well as the rear surface of a joint surface to the second conductive member of FWD chip. The first conductive member comprises a semiconductor region as at least a part containing the joint surface to the MOS chip, with the SBD being configured in that region. The second conductive member comprises a semiconductor region which is composed of the same material as the substrate constituting the FWD chip, and has higher impurity concentration than the substrate, as at least a part containing the joint surface to the FWD chip. COPYRIGHT: (C)2009,JPO&INPIT |
