发明名称 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a TFT with high light resistance in which an optical leak current is restrained at low cost by simplifying manufacturing processes. SOLUTION: The TFT basically has a lightproof film 113 which is formed on a glass substrate serving as an insulating substrate 107; an insulating film 112 which is formed on the lightproof film 113; a semiconductor film 111 which is formed on the insulating film 112; and a gate insulating film 104 which is formed on the semiconductor film 111. In a laminated body 100a which is composed of three layers of the lightproof film 113, the insulating film 112, and the semiconductor film 111 each of which is patterned simultaneously. Further, each layer of the laminated body 100a is formed of silicon or a material containing silicon. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009016742(A) 申请公布日期 2009.01.22
申请号 JP20070179822 申请日期 2007.07.09
申请人 NEC LCD TECHNOLOGIES LTD 发明人 TANABE HIROSHI
分类号 H01L21/336;G02F1/1368;H01L29/786 主分类号 H01L21/336
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