| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method capable of embedding even a fine recessed section with a high step coverage by forming a Mn containing thin film, a CuMn containing alloy thin film, or the like by heat treatment such as CVD (Chemical Vapor Deposition) and greatly reducing the cost of a device by performing continuous processing with one and the same processor. SOLUTION: On a surface of a material W to be processed, a thin film is formed by heat treatment by using a transition metal containing material gas containing transition metals and an oxygen containing gas in a vacuumable treatment container 14. Consequently, for example, the Mn containing thin film or the CuMn containing alloy thin film can be formed with a high step coverage even in a fine recessed section when forming it by heat treatment such as CVD. COPYRIGHT: (C)2009,JPO&INPIT |
