发明名称 |
METHOD FOR PRODUCING SEMI-CONDUCTING MATERIAL WAFER BY MOLDING AND DIRECTIONAL CRYSTALLIZATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing semi-conducting material wafers, the method being easy to implement while at the same time ensuring a good crystallographic quality and enabling high solidification rates to be achieved. SOLUTION: Wafers of a semi-conducting material are formed by molding and directional crystallization from a liquid mass 9 of this material. A seed 8, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. A mold 5 is filled with the molten semi-conducting material 9 by means of a piston 7 or by creation of a pressure difference in the device. The mold 5 is preferably coated with an anti-adhesive deposit. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009013055(A) |
申请公布日期 |
2009.01.22 |
申请号 |
JP20080170776 |
申请日期 |
2008.06.30 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DREVET BEATRICE;SARTI DOMINIQUE;CAMEL DENIS;GARANDET JEAN-PAUL |
分类号 |
C30B29/06;C01B33/037;C30B11/00 |
主分类号 |
C30B29/06 |
代理机构 |
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