发明名称 METHOD FOR PRODUCING SEMI-CONDUCTING MATERIAL WAFER BY MOLDING AND DIRECTIONAL CRYSTALLIZATION
摘要 PROBLEM TO BE SOLVED: To provide a method for producing semi-conducting material wafers, the method being easy to implement while at the same time ensuring a good crystallographic quality and enabling high solidification rates to be achieved. SOLUTION: Wafers of a semi-conducting material are formed by molding and directional crystallization from a liquid mass 9 of this material. A seed 8, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. A mold 5 is filled with the molten semi-conducting material 9 by means of a piston 7 or by creation of a pressure difference in the device. The mold 5 is preferably coated with an anti-adhesive deposit. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009013055(A) 申请公布日期 2009.01.22
申请号 JP20080170776 申请日期 2008.06.30
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 DREVET BEATRICE;SARTI DOMINIQUE;CAMEL DENIS;GARANDET JEAN-PAUL
分类号 C30B29/06;C01B33/037;C30B11/00 主分类号 C30B29/06
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