| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory element manufacturing method for effectively preventing a failure of bit lines by preventing the occurrence of bridging between contact plugs. SOLUTION: The flash memory manufacturing method comprises etching first and second interlayer insulating films 104, 114 formed on a semiconductor substrate 100 to form first and second contact holes 106, 116 which expose a junction region out of a cell region. Contact plugs 110, 118a lower than the interfaces of the first and second interlayer insulating films are formed in the contact holes, and a spacer 120a is formed between the side walls of the contact holes on the upper parts of the contact plugs, thereby preventing bridging between the drain contact plugs for open paths produced on a conductive residual layer 112 and on the first and second interlayer insulating film interfaces, e.g. This prevents a failure in inducing a leakage current in bit lines connected to the drain contact plugs and improves the yield of steps and the reliability of the element. COPYRIGHT: (C)2009,JPO&INPIT
|
