<p>A method of making a p-type Cadmium Selenide semiconductor material includes depositing an initial doped Cadmium Selenide layer, using a dopant that includes at least one element selected from the group consisting of Group IIIB elements and Group VIIB elements. The doped layer of Cadmium Selenide is then coated with a solution including a solvent and at least one of the following chlorides: chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements. The doped layer of Cadmium Selenide is then heated in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the doped layer of Cadmium Selenide.</p>
申请公布号
WO2009012346(A1)
申请公布日期
2009.01.22
申请号
WO2008US70240
申请日期
2008.07.16
申请人
ASCENT SOLAR TECHNOLOGIES, INC.;WOODS, LAWRENCE, M.;RIBELIN, ROSINE, M.