METHOD FOR SURFACE TREATMENT, SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCOTR DEVICE

摘要

A surface processing method, a semiconductor device and a forming method thereof are provided to reduce electric failure like the short of the semiconductor device by forming a contact unit with upper and lower parts with different width. A first oxide film(110) and a second oxide film(120) are formed on a substrate(100). A contact hole is formed by pattern-etching the first oxide film and the second oxide film. A first reactive film is formed by the reaction of the first oxide film exposed by the contact hole with the HF. A second reactive film is formed by the reaction of the second oxide film exposed by the contact hole with the NH3 and HF. The contact hole is expanded by removing the first reactive film and the second reactive film. The contact unit is formed on the expanded contact hole.