| 摘要 |
PROBLEM TO BE SOLVED: To make resistance of a gate electrode of a high breakdown voltage transistor group low by forming a low voltage operating transistor group and a high breakdown voltage (high voltage operating) transistor group on one and the same semiconductor substrate. SOLUTION: The semiconductor substrate 11 includes a first transistor group and a second transistor group of operating voltage lower than the operating voltage of the first transistor group, wherein the first transistor group has a first electrode 15 formed on the semiconductor substrate 11 through a first gate insulating film 13, and a silicide layer 40 formed on the first gate electrode 15, the second transistor group has second gate electrodes 47 and 48 formed in a gate formation groove 42 formed in an insulating film (a liner film 36 and a first interlayer insulating film 38) on the semiconductor substrate 11 through a second gate insulating film 43, wherein a protective film 41 covering the silicide layer 40 on the first gate electrode 15 of the first transistor group is formed. COPYRIGHT: (C)2009,JPO&INPIT |
