Method for Delineation of Phase Change Memory Cell Via Film Resistivity Modification

摘要

A PCM cell structure comprises a lower electrode composed of a Phase Change Memory (PCM) layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition.