| 摘要 |
PROBLEM TO BE SOLVED: To enhance electrostatic protection capability in an N-type MOS transistor for short-circuit used in a power supply clamping method. SOLUTION: The semiconductor integrated circuit has a MOS transistor in which a drain electrode or a source electrode is connected to a highest potential electrode, the source electrode or the drain electrode is connected to the lowest potential electrode, and an electrostatic pulse is input to a gate electrode. The semiconductor integrated circuit operates as a MOS transistor when voltage between an electrode connected to the highest potential electrode and a conductive well opposite from the electrode is equal to or less than voltage that causes breakdown, and operates as a bipolar transistor when the voltage between the electrode and the opposite conductive well is equal to or higher than the voltage that causes breakdown. COPYRIGHT: (C)2009,JPO&INPIT |
